Lesson Plan | ||
Name of the Faculty : Rinki | ||
Discipline : B.TECH (Civil) | ||
Semester : 1st | ||
Subject : PHYSICS, Course Code: BSC 101D | ||
Lesson Plan Duration : 15 Weeks (from August, 2018 to December, 2018) | ||
Work Load (Lecture/ Practical) per week (in hours) : Lecure-03, Tutorial-01, Practical-03 | ||
week | Theory | |
Lecture Day | Topic(including Tutorial/Assignment/Test) | |
1 | I | Unit 1: Electronic materials Free electron theory |
II | Density of states and energy band diagrams | |
III | Continue topic. | |
T | Revision of above topics. | |
2 | I | Kronig-Penny model (to introduce origin of band gap) |
II | Continue last topic. | |
III | Energy bands in solids | |
T | Revision of above topics./Assignment: Kronig-Penny model | |
3 | I | E-k diagram, Direct and indirect bandgaps |
II | Types of electronic materials: metals, semiconductors, and insulators |
|
III | Continue last topic. | |
T | Test: E-k diagram, Direct and indirect bandgaps | |
4 | I | Density of states, |
II | Occupation probability,Fermi level | |
III | Effective mass, Phonons | |
T | Revision of previous topics. | |
5 | I | Unit 2: Semiconductors Intrinsic and extrinsic semiconductors |
II | Dependence of Fermi level on carrier-concentration and temperature (equilibrium carrier statistics), | |
III | Continue last topic. | |
T | Revision of above topics. | |
6 | I | Carrier generation and recombination |
II | Carrier transport: diffusion and drift, p-n junction | |
III | Continue last topic. | |
T | Revision of above topics./Assignment:Carrier generation and recombination,Carrier transport: diffusion and drift, p-n junction | |
7 | I | Metal-semiconductor junction (Ohmic and Schottky), |
II | Continue last topic. | |
III | Test: Metal-semiconductor junction | |
T | Revision of previous topics. | |
8 | I | Semiconductor materials of interest for optoelectronic devices. |
II | Unit 3: Light-semiconductor interaction Opticaltransitions in bulk semiconductors: absorption, spontaneous emission,and stimulated emission | |
III | Continue last topic. | |
T | Revision of previous topics. | |
9 | I | Joint density of states, Density of states for photons |
II | Continue last topic. | |
III | Transition rates (Fermi's golden rule) | |
T | Revision of above topics./Assignment :Fermi's golden rule | |
10 | I | Optical loss and gain; Photovoltaic effect |
II | Continue last topic. | |
IIII | Exciton, Drude model | |
T | Test: Optical loss and gain; Photovoltaic effect. | |
11 | I | Unit 4: Measurements Four-point probe |
II | van der Pauw measurements for carrier density | |
III | Continue last topic. | |
T | Revision of previous topics. | |
12 | I | resistivity, and hall mobility |
II | Hot-point probe measurement | |
III | capacitance-voltage measurements | |
T | Revision of previous topics./Assignment :van der Pauw measurements for carrier density, resistivity, and hall mobility | |
13 | I | parameter extraction from diode I-V characteristics |
II | DLTS | |
III | band gap by UV-Vis spectroscopy | |
T | Test: Measurements . | |
14 | I | absorption/transmission. |
II | Unit 5: Engineering semiconductor materials Density of states in 2D, 1d and 0D (qualitatively). | |
III | Practical examples of low-dimensional systems such as quantum wells, wires, and dots | |
T | Revision of previous topics./Assignment :Density of states in 2D, 1d and 0D | |
15 | I | design, fabrication, and characterization techniques. |
II | Continue last topic. | |
III | Heterojunctions and associated band-diagrams | |
T | Test:design, fabrication, and characterization techniques. |